Boundary Layers Defect Diagnosis and Analysis of Through Silicon Via(TSV)

doi:10.23940/ijpe.19.01.p10.97106

Abstract

Abstract:

TSV technology can achieve heterogeneous integration by stacking different technologies and functions of logic chip, memory, MEMS, etc., as a system. There are many significant advantages for heterogeneous integration in terms of cost, performance, and time to market. TSV technology has the potential to improve 3D packaging. As the important physical connection and electrical connection between the chips, TSV’s reliability is undoubtedly the key to determine the reliability of TSV three-dimensional integrated devices. As a new interconnect technology, TSV technology faces many process difficulties and challenges. Its reliability has not been fully studied and guaranteed. The process optimization and reliability improvement of TSV have become a hot topic in recent years. Recognition process defects andanalysis of the failure mechanism play important roles in the optimization and improvement of design, production, and use of TSV three-dimensional integrated devices. In this paper, the square TSV and circular TSV with different ratios were researched by microphysical analysis and data analysis. The analysis results revealed the key technological factors and physical mechanism of formation of the TSV defects, which can support TSV device development, production, and reliable application.

Key words: TSV, boundary layers, defect, failure analysis

Yuan Chen, Peng Zhang, Kuiliang Xia, and Hongzhong Huang. Boundary Layers Defect Diagnosis and Analysis of Through Silicon Via(TSV) [J]. Int J Performability Eng, 2019, 15(1): 97-106.

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Point	Cu seed layer($\text{ }\!\!\mu\!\!\text{ m}$)	Parylene layer($\text{ }\!\!\mu\!\!\text{ m}$)	SiO₂ layer($\text{ }\!\!\mu\!\!\text{ m}$)
Point 1	2.89	1.13	2.30
Point 2	2.34	0.99	1.94
Point 3	1.56	0.85	1.18
Point 4	1.27	1.02	1.00
Point 5	0.47	0.99	0.39
Point 6	0.68	0.97	0.33
Point 7	0.80	0.76	0.36
Point 8	0.71	0.86	0.42
Point 9	1.11	0.71	0.37
Point 10	0.38	1.17	0.52
Point 11	0.76	1.12	0.85
Point 12	0.77	1.33	1.20
Point 13	0.99	0.85	1.67
Point 14	1.85	1.09	2.06
Point 15	2.99	1.21	2.12
Average value	1.30	1.00	1.11
Mean square error	0.82	0.17	0.71

Via No.	S3	S5	S8	C3	C5	C8
Diameter/Side length($\text{ }\!\!\mu\!\!\text{ m}$)	79.6	71.1	48.6	78.6	67.6	46.2
Depth($\text{ }\!\!\mu\!\!\text{ m}$)	120.0	122.8	115.3	115.0	115.5	111.2
Aspect ratio	1.5	1.7	2.3	1.5	1.7	2.4
Average value($\text{ }\!\!\mu\!\!\text{ m}$)	1.31	1.26	1.07	1.12	1.07	0.98
Mean square error($\text{ }\!\!\mu\!\!\text{ m}$)	0.823	0.855	0.870	0.823	0.945	0.995