Design of Register File for Negative Bias Temperature Instability

doi:10.23940/ijpe.19.11.p25.30523060

Int J Performability Eng ›› 2019, Vol. 15 ›› Issue (11): 3052-3060.doi: 10.23940/ijpe.19.11.p25.30523060

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Design of Register File for Negative Bias Temperature Instability

Yuanyuan Ma^a, Bai Na^a,*, Wei Tan^b, and Gelan Yang^c

^aSchool of Electronic and Information Engineering, University of Anhui of China, Hefei, 230601, China;
^bSchool of Computer Science and Technology, Dongguan University of Technology, Dongguan, 523808, China;
^cDepartment of Computers, Hunan City University, Yiyang, 413000, China

Submitted on ; Revised on ; Accepted on
Contact: * E-mail address: bnasic@126.com

Abstract

Abstract: Negative bias temperature instability (NBTI) is becoming an important reliability problem in the semiconductor industry. As time goes on, the NBTI aging impact affects microprocessors' ability to perform correct calculations. The SRAM-based register file block is one of the largest logic units, and it is affected by process deviations. SRAM is the bottleneck of the whole process deviation tolerance. Based on theoretical analysis, the connection between the SRAM static noise margin value and the bitcell probability is discussed. Moreover, this paper adopts a dynamic shifter combined with periodic bitcell inversion design to reduce the NBTI aging impact and achieve a more robust register file. Simulation results exhibit that this design improves the bitcell probability by 3.7 times and reduces the uncertainty of SNM caused by NBTI stress to 46.79%.

Key words: negative bias temperature instability, architecture register file, static noise margin, bias probability

Yuanyuan Ma, Bai Na, Wei Tan, and Gelan Yang. Design of Register File for Negative Bias Temperature Instability [J]. Int J Performability Eng, 2019, 15(11): 3052-3060.

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References

[1] J. Abella, X. Vera,A. Gonza´lez, “Penelope: The NBTI-Aware Processor,” inProceedings of 40th Annual IEEE/ACM International Symposium on Microarchitecture (MICRO 2007), pp. 85-96, 2007
[2] K. Kang, S. Gangwal, S. P. Park, and K. Roy, “NBTI Induced Performance Degradation in Logic and Memory Circuits: How Effectively Can We Approach a Reliability Solution?” in Proceedings of 2008 Asia and South Pacific Design Automation Conference (ASP-DAC), pp. 726-731, 2008
[3] S. V. Kumar, C. H. Kim, and S. S. Sapatnekar, “Impact of NBTI on SRAM Read Stability and Design for Reliability,” in Proceedings of the 2006 7th International Symposium on Quality Electronic Design (ISQED), pp. 210-218, 2006
[4] Y. Lin, Y. Li, X. Yin,Z. Dou, “Multisensor Fault Diagnosis Modeling based on the Evidence Theory,” IEEE Transactions on Reliability, Vol. 67, No. 2, pp. 513-521, 2018
[5] Y. Lin, C. Wang, J. Wang,Z. Dou, “A Novel Dynamic Spectrum Access Framework based on Reinforcement Learning for Cognitive Radio Sensor Networks,” Sensors, Vol. 16, No. 10, pp. 1675, 2016
[6] Y. Lin, X. Zhu, Z. Zheng, Z. Dou,R. Zhou, “The Individual Identification Method of Wireless Device based on Dimensionality Reduction and Machine Learning,” Journal of Supercomputing, Vol. 75, No. 6, pp. 3010-3027, 2019
[7] K. Kang, H. Ku?uoglu, K. Roy, and M. A. Alam, “Impact of Negative-Bias Temperature Instability in Nanoscale SRAM Array: Modeling and Analysis,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 26, No. 10, pp. 1770-1781, 2007
[8] G. Yang and J. Nightingale, “Special Issue on Mobile Multimedia Big Data Embedded Systems,” J. Adv. Comput. Intell. Intell. Inform., Vol. 22, No. 7, pp. 1071, 2018
[9] W. Zhao and Y. Cao, “New Generation of Predictive Technology Model for Sub-45 nm Early Design Exploration,” IEEE Transactions on Electron Devices, Vol. 53, No. 11, pp. 2816-2823, 2006
[10] M. Marchitto, S. Benedetto, T. Baccino,J. J. Canas, “Air Traffic Control: Ocular Metrics Reflect Cognitive Complexity,”International Journal of Industrial Ergonomics, Vol. 54, pp. 120-130, 2016
[11] C. H. Liu, M. T. Lee, C. Y. Lin, J. Chen, K. Schruefer, J. Brighten, et al., “Mechanism and Process Dependence of Negative Bias Temperature Instability (NBTI) for pMOSFETs with Ultrathin Gate Dielectrics,” in Proceedings of IEEE International Electron Devices Meeting, pp. 39.2.1-39.2.4, 2001
[12] B. Zhu, J. S. Suehle, Y. Chen,J. B. Bernstein, “Negative Bias Temperature Instability of Deep Sub-Micron p-MOSFETs under Pulsed Bias Stress,”IEEE International Integrated Reliability Workshop Final Report, pp. 125-129, 2002
[13] M. Marchitto, S. Benedetto, T. Baccino,J. J. Canas, “Air Traffic Control: Ocular Metrics Reflect Cognitive Complexity,” International Journal of Industrial Ergonomics, Vol. 54, No. 4, pp. 120-130, 2016

Design of Register File for Negative Bias Temperature Instability

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