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Volume 14 - 2018

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Reliability and Radiation Effects in Compound Semiconductors




World Scientific, Singapore



Allan Johnston



Reliability and Radiation Effects in Compound Semiconductors

Year of Publication











Krishna B. Misra



Review published in IJPE, Vol. 8, No. 1, January 2012, p. 18.



The book consists of the following 13 chapters followed by Authors’ Preface:



02 Pages

Chapter 1


07 Pages

Chapter 2

Semiconductors Fundamentals

32 Pages

Chapter 3

Transistor Technologies

34 Pages

Chapter 4


41 Pages

Chapter 5

Reliability Fundamentals

25 Pages

Chapter 6

Compound Semiconductor Reliability

27 Pages

Chapter 7

Optoelectronic Device Reliability

33 Pages

Chapter 8

Radiation Environments

30 Pages

Chapter 9

Interaction of Radiation with Semiconductors

28 Pages

Chapter 10

Displacement Damage in Compound Semiconductors

19 Pages

Chapter 11

Displacement Damage in Optoelectronic Devices

28 Pages

Chapter 12

Radiation Damage in Optocouplers

22 Pages

Chapter 13

Effects from Single Particles

24 Pages


07 Pages


The author comes from the Jet Propulsion Laboratory, Pasadena and has had a very rich experience of studying radiation effect phenomena on optoelectronics and microelectronics. There has not been so intensive study of effect of radiations on compound semiconductors which are now being used extensively in various applications. 9789814277105 - Reliability and Radiation Effects in Compound SemiconductorsParticularly, in space exploration of long duration, where the devices often are exposed to various kinds of radiation hazards and the failure of such a device could jeopardize the entire project that is often very expensive. The study of radiation effect requires knowledge of semiconductors physics and reliability. Therefore the book aptly starts with the background material on semiconductor physics and devices as well as basic reliability concepts and models. This is one of the few books, which covers the subject most comprehensively. Compound semiconductors use a variety of materials and sometimes new materials with widely different properties. These result in altogether new failure mechanisms in compound semiconductor devices, the knowledge of which is quite essential to improve performance of s system that uses such devices. Some of these devices can be produced only in thin layers, and must be grown on substrates with different lattice spacing. With the exception of SiGe, none have low defect density of silicon.   Moreover, problems such as gate sinking and current collapse may occur for which no conventional approach is effective. Therefore, a thorough understanding of material properties is necessary to understand the effect of radiation on these types of semiconductors. The book also includes a chapter providing a thorough discussion of radiations that would be encountered in space environment, which include particles that produce permanent damage and those producing transient effects due to galactic cosmic rays, solar flares and terrestrial particles such as alpha particles, etc.

A reader would find a detailed discussion of the radiation damage on electronic and optoelectronic devices in this book and also a separate chapter on optocouplers that use silicon as well as compound semiconductor devices.

The reviewer feels that this book is a must for reliability engineers who are responsible for designing systems which may be exposed to radiation environments, as exist in space. Also the book should be useful to reliability and electronic engineering students, teachers and researchers who like to supplement their database for designing systems that require radiation qualification tests.


- Krishna B. Misra

Review published in the International Journal of Performability Engineering, Vol. 8, No. 1, January, 2012, p. 18.


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