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Boundary Layers Defect Diagnosis and Analysis of Through Silicon Via (TSV)

Volume 15, Number 1, January 2019, pp. 97-106
DOI: 10.23940/ijpe.19.01.p10.97106

Yuan Chena,b, Peng Zhangc, Kuiliang Xiad, and Hongzhong Huanga

aSchool of Mechanical and Electrical Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China
bScience and Technology on Reliability Physics and Application of Electronic Component Laboratory, The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou, 510610, China
cAnalysis and Test Center, South China University of Technology, Guangzhou, 510640, China
dSchool of Microelectronics, Xidian University, Xi’an, 710071, China

(Submitted on October 14, 2018; Revised on November 16, 2018; Accepted on December 10, 2018)

Abstract:

TSV technology can achieve heterogeneous integration by stacking different technologies and functions of logic chip, memory, MEMS, etc., as a system. There are many significant advantages for heterogeneous integration in terms of cost, performance, and time to market. TSV technology has the potential to improve 3D packaging. As the important physical connection and electrical connection between the chips, TSV’s reliability is undoubtedly the key to determine the reliability of TSV three-dimensional integrated devices. As a new interconnect technology, TSV technology faces many process difficulties and challenges. Its reliability has not been fully studied and guaranteed. The process optimization and reliability improvement of TSV have become a hot topic in recent years. Recognition process defects and analysis of the failure mechanism play important roles in the optimization and improvement of design, production, and use of TSV three-dimensional integrated devices. In this paper, the square TSV and circular TSV with different ratios were researched by microphysical analysis and data analysis. The analysis results revealed the key technological factors and physical mechanism of formation of the TSV defects, which can support TSV device development, production, and reliable application.

 

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